System, IC chip, on-chip test structure, and corresponding method for modeling one or more target interconnect capacitances

ABSTRACT

A system, an IC chip, a test structure formed on the IC chip, and a corresponding method for modeling one or more target interconnect capacitances is disclosed. The test structure comprises an interconnect configuration comprising a test interconnect and one or more target interconnects. The interconnect configuration has, for each target interconnect, a corresponding target interconnect capacitance between the test interconnect and the target interconnect. The test structure also comprises a test interconnect charging circuit connected to the test interconnect. The test interconnect charging circuit is configured to place a test charge on the test interconnect. The test structure further comprises one or more target interconnect charging circuits. Each target interconnect charging circuit is connected to a corresponding target interconnect. Each target interconnect charging circuit is configured to draw a target interconnect charging current from the corresponding target interconnect in response to the test charge. This places an opposite charge on the corresponding target interconnect that is induced by the corresponding target interconnect capacitance. As a result, a measurement of the corresponding target interconnect capacitance may be computed by making a measurement of the target interconnect charging current with a current meter of the system.

This is a division of application Ser. No. 09/246,469 filed Feb. 9, 1999, now U.S. Pat. No. 6,300,765.

BRIEF DESCRIPTION OF THE INVENTION

The present invention relates generally to techniques of extracting parameter measurements for circuit simulations. In particular, it pertains to an improved IC chip, on-chip test structure, and corresponding method for modeling one or more interconnect capacitances. Precise measurements of the interconnect capacitances can be made with the test structure. These measurements are then used to accurately extract interconnect parameter measurements for circuit simulations.

BACKGROUND OF THE INVENTION

As integrated circuits become increasingly laden with metal or polysilicon interconnects, the resulting interconnect capacitances are rapidly becoming a bottleneck in the design of faster ICs. It has therefore become very important to model these capacitances in order to accurately simulate the performance of ICs. However, it is difficult to make measurements of modeled interconnect capacitances with high accuracy and resolution. As a result, the extraction of interconnect parameters using these measurements is often not precise. This causes circuit simulations performed without correctly extracted interconnect parameters to be inaccurate and unreliable.

In the past, on-chip test structures have been used in attempts to model interconnect capacitances with higher accuracy and resolution. However, many of these test structures suffer from significant deficiencies which make them inefficient and/or result in interconnect capacitance measurements made with them being inaccurate and/or having low resolution.

For example, the on-chip test structures disclosed in Khalkhal, A., et al., On-Chip Measurement of Interconnect Capacitances in a CMOS Process, Proc. IEEE 1995 Int. Conf. on Microelectronic Test Structures, vol. 8 (March 1995), Gaston, G. J., et al., Efficient Extraction of Metal Parasitic Capacitances, Proc. IEEE 1995 Int. Conf. on Microelectronic Test Structures, vol. 8 (March 1995), Shyu, J. B., et al., Random Effects in Matched MOS Capacitors and Current Sources, IEEE Journal of Solid State Circuits, vol. sc-19(6):948-955 (December 1984), Kortekaas, C., On-Chip Quasi-Static Floating-Gate Capacitance Measurement Method, Proc. IEEE 1990 Int. Conf. on Microelectronic Test Structures, vol. 3 (March 1990), and Laquai, B., et al., A New Method and Test Structure for Easy Determination of Femto-Farad On-Chip Capacitances in a MOS Process, Proc. IEEE 1992 Int. Conf. on Microelectronic Test Structures, vol. 5:62-66 (March 1992), require a reference capacitor and/or a complicated test structure design and measurement set-up. Moreover, these test structures provide only picofarad or femptofarad resolution and occupy a large chip area.

An improved test structure with attofared resolution is disclosed in Chen, J. C., et al., An On-Chip, Attofared Interconnect Charge-Based Capacitance Measurement (CBCM) Technique, Proc. of IEDM 1996, pp. 69-72. This test structure has a reference structure and a target structure. The reference structure is identical to the target structure except that the interconnect configuration of the reference structure does not include the target interconnect capacitance to be modeled and measured. The difference in current between charging (or discharging) the total capacitances of the reference and target structures is then used to compute a measurement of the target interconnect capacitance.

One problem with such a test structure is that it requires a corresponding reference structure for the target structure. This obviously increases the chip area of the entire test structure.

Another problem is that the test structure can only be used to measure one target interconnect capacitance. Thus, if an IC designed by an IC designer has a complicated interconnect configuration with many interconnect capacitances in close proximity to each other, a separate test structure is required for each of these interconnect capacitances. This increases the chip area of the IC chip on which all of the test structures are formed.

Conversely, if only one test structure is used for a complicated interconnect configuration, only one lumped interconnect capacitance can be modeled and measured. This means that the specific interconnect capacitances that comprise the lumped capacitance cannot be separately modeled and measured.

In view of the foregoing, it would be highly desirable to provide an improved test structure that has small chip area and is capable of separately modeling all of the specific interconnect capacitances in a complicated interconnect configuration. Ideally, the interconnect capacitance measurements made with such a test structure could be used to extract interconnect parameters for accurately simulating ICs.

SUMMARY OF THE INVENTION

In summary, the present invention comprises a system, an IC chip, a test structure formed on the IC chip, and a corresponding method for modeling one or more target interconnect capacitances.

The test structure comprises an interconnect configuration formed on the IC chip. The interconnect configuration comprises a test interconnect and one or more target interconnects. The interconnect configuration has, for each target interconnect, a corresponding target interconnect capacitance between the test interconnect and the target interconnect.

The test structure also comprises a test interconnect charging circuit formed on the IC chip and connected to the test interconnect. The test interconnect charging circuit is configured to place a test charge on the test interconnect.

The test structure further comprises one or more target interconnect charging circuits. Each target interconnect charging circuit is formed on the IC chip and connected to a corresponding target interconnect. Each target interconnect charging circuit is configured to draw a target interconnect charging current from the corresponding target interconnect in response to the test charge. This places an opposite charge on the corresponding target interconnect that is induced by the corresponding target interconnect capacitance.

A measurement of the target interconnect charging current can be made with a current meter of the system. From this measurement, a measurement of the corresponding target interconnect capacitance may be computed.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit schematic of an on-chip test structure for modeling one or more target interconnect capacitances.

FIG. 2 shows a cross sectional layout of an interconnect configuration in the test structure of FIG. 1.

FIG. 3 provides a timing diagram of the control signals used in the test structure of FIG. 1.

FIG. 4 shows an embodiment where the on-chip test structure of FIG. 1 is formed on an IC chip together with an IC.

DETAILED DESCRIPTION OF THE INVENTION

Referring to FIG. 1, there is shown a system 100 for modeling one or more target interconnect capacitances c₁ to c_(N), where N>1. The system comprises an on-chip test structure 101 formed on an IC chip 102. The test structure is used in conjunction with the other components of the system, namely an off-chip current meter (A) 138, an off-chip frequency meter (Hz) 139, off-chip voltage sources 128 to 131, and probes 133 to 137, to make measurements of the target interconnect capacitances. As will be described in the following sections, measurements of these target interconnect capacitances may be made and used to extract interconnect parameter measurements for circuit simulation.

Test Structure Configuration

The test structure 101 comprises an interconnect configuration (i.e., structure) 104 to model the target interconnect capacitances c₁ to c_(N). The interconnect configuration models the same interconnect configuration that will appear in an IC. Thus, it is designed and fabricated on the IC chip 102 according to the same physical parameters and semiconductor process steps that are used in designing and fabricating the IC.

The interconnect configuration 104 comprises a test interconnect 105 and one or more target interconnects 106-1 to 106-N. These interconnects may be metal or polysilicon. Furthermore, each target capacitance c_(n), where 1≦n≦N, exists between the test interconnect 105 and a corresponding target interconnect 106-n.

A cross sectional view of how the interconnect configuration 104 is laid out on the IC chip 102 is shown in FIG. 2. The interconnect configuration is formed on a semiconductor substrate 107 of the IC chip. In addition to the interconnects 105 and 106-1 to 106-N, the interconnect configuration also comprises an insulating material 108, such as oxide, formed on the substrate. The interconnects are patterned within the insulating material in a simple or complicated configuration or geometry. For example, the interconnect configuration may comprise only two parallel interconnects 105 and 106-1. Or, it may comprise an interconnect 105 with many overlapping, parallel, intertwined, and/or snaking interconnects 106-1 to 106-N. Each target capacitance c_(n) is formed by the test interconnect 105, the corresponding target interconnect 106-n, and the insulating material 108 between these two interconnects.

Referring back to FIG. 1, the test structure 101 also comprises target interconnect charging circuits 109-1 to 109-N, output pads 110-1 to 110-N, and an input pad 111. The target interconnect charging circuits, output pads, and input pad are all formed on the IC chip 102 using conventional semiconductor process techniques.

For each target interconnect 106-n, there is a corresponding target interconnect charging circuit 109-n and a corresponding output pad 110-n. Each target interconnect charging circuit 109-n is configured to enable a measurement of the corresponding target interconnect capacitance c_(n) to be made. For this purpose, it comprises two NMOS transistors 112 and 113.

The drain, gate, and source of the transistor 112 are respectively connected to the corresponding target interconnect 106-n, a target interconnect charging control circuit 115, and the corresponding output pad 110-n. The control circuit is located in a control signal generator 114 of the test structure 101. It provides a target interconnect charging control signal CHRG1 to the gate of the transistor during operation of the test structure. During this time, the output pad is connected to the local ground voltage source 131 via the current meter 138 and the probe 133 connected to the current meter. This connects the source of the transistor to the ground voltage source so that it receives the ground voltage V_(GND).

Similarly, the drain, gate, and source of the other transistor 113 are respectively connected to the corresponding interconnect 106-n, a target interconnect discharging control circuit 116 in the control signal generator 114, and the input pad 111. During operation of the test structure 101, the control circuit provides a target interconnect discharging control signal DCHRG1 to the gate of the transistor. During this time, the input pad is connected to the global ground voltage source 129 with the probe 134 to receive the ground voltage V_(GND). As a result, the source of the transistor is connected to the ground voltage source and receives the ground voltage V_(GND).

The test structure 101 also comprises a test interconnect charging circuit 117 and an input pad 118 formed on the IC chip 102 using conventional semiconductor process techniques. The off-chip supply voltage source 128 is connected between this input pad and the global ground voltage source 129 during operation of the test structure 101. This is done with the probe 135 connected to the supply voltage source. As a result, the input pad receives a supply voltage V_(DD) from the voltage source.

The test interconnect charging circuit 117 comprises a PMOS transistor 119. The source and gate of the transistor are respectively connected to the input pad 118 and a test interconnect charging control signal generator 121 in the control signal generator 114. The input pad and probe 135 connect the source of the transistor to the supply voltage source 128 during operation of the test structure 101. This provides the supply voltage V_(DD) to the source of the transistor. And, during this time, the control circuit provides a test interconnect charging control signal CHRG2 to the gate of the transistor.

The test interconnect charging circuit 117 also comprises an NMOS transistor 120. The gate and the source of the transistor are respectively connected to a test interconnect discharging control circuit 122 in the control signal generator 114 and the input pad 111. During operation of the test structure 101, the control circuit provides a test interconnect discharging control signal DCHRG2 to the gate of the transistor. Since the input pad is connected to the global ground voltage source 129 with the probe 134 during this time, the source of the transistor is connected to the global ground voltage source and receives the ground voltage V_(GND).

The drains of the transistors 119 and 120 are connected together and to the test interconnect 104. This connection forms a node 123 of the test interconnect charging circuit 117. The node is used to charge and discharge the test interconnect during operation of the test structure 101. The manner in which this is done is described in the section covering the operation of the test structure 101.

The control signal generator 114 and input and output pads 124 and 125 of the test structure 101 are formed on the IC chip 102 using conventional semiconductor process techniques as well. In addition to the control circuits 115, 116, 121, and 122, the control signal generator also comprises a clock circuit 126 and a frequency divider (M) 127.

The clock circuit 126 is connected to the control circuits 115, 116, 121, and 122 and the input pads 111, 118, and 124. During operation, the clock circuit is connected to the supply and global ground voltage sources 128 and 129 with the input pads 118 and 111 and probes 135 and 134. It therefore receives the supply and ground voltages V_(DD) and V_(GND) and in response generates a clock signal CLK. The frequency of the clock signal is controlled with a frequency control voltage V_(freq). During operation, the off-chip variable voltage source 130 is connected between the input pad 124 and the global ground voltage source 129. This is done with the probe 136 connected to the variable voltage source and connects the clock circuit to the variable voltage source to receive the frequency control voltage. In response to variations in the frequency control voltage, the clock circuit adjusts the frequency of the clock signal.

The control circuits 115, 116, 121, and 122 are each connected to the clock circuit 126 to receive the clock signal CLK. In response, the control circuits generate their respective control signals CHRG1, DCHRG1, CHRG2, and DCHRG2.

The frequency divider 127 is connected to the target interconnect charging control circuit 115 to receive the target interconnect charging control signal CHRG1. It divides the frequency f_(CHRG1) of this control signal by a pre-selected factor M so that it can be measured. The frequency divider is connected to the output pad 125 to provide it with the resulting measurable frequency signal FREQ. The frequency f_(CHRG1)/M of this signal is measured with the frequency meter 139 during operation of the test structure when the frequency meter is connected between this output pad and the global ground voltage source 129. This is done with the probe 137 connected to the frequency meter.

Test Structure Operation

The method of making a measurement of any target interconnect capacitance c_(n) during operation of the test structure 101 will now be described with respect to FIGS. 1 and 3. Example waveforms of the control signals CHRG1, DCHRG1, CHRG2, and DCHRG2 required for making such a measurement are shown in the timing diagram of FIG. 3. Over the various phases (i.e., modes or time periods) of operation of the test structure, these control signals transition back and forth between low at 0 V (volts) and high at V_(DD). As alluded to earlier, the frequency f_(CHRG1) of these signals is arbitrary and can be set with the frequency control signal V_(freq). In the timing diagram of FIG. 1, this frequency is 1 MHz.

During a reset phase between 0 ns and 300 ns, the test structure 101 is reset for measurement of the interconnect capacitance c_(n). The discharge and charging control signals DCHRG2 and CHRG2 are high during this phase and respectively indicate that discharging is to occur and charging is not to occur on the test interconnect 105. In other words, only discharging is to occur. In the charging circuit 117, this turns on the transistor 120 while leaving the transistor 119 off. As a result, a discharging current I_(DCHRG2) is drawn by the transistor 120 from the interconnect to the global ground voltage source 129. This removes any pre-existing charge on the interconnect.

Similarly, the discharging control signal DCHRG1 is high and the charging control signal CHRG1 is low during the reset phase and together indicate that only discharging is to occur on the corresponding interconnect 106-n. Thus, the discharging control signal indicates that discharging is to occur while the charging control signal indicates that charging is not to occur. In the corresponding target interconnect charging circuit 109-n, this turns on the transistor 113 and leaves the transistor 112 off. A discharging current I_(DCHRG1) is therefore drawn by the transistor 112 from the local ground voltage source 131 to the target interconnect. Thus, any pre-existing charge on the target interconnect is also removed.

During an off phase between 300 ns and 400 ns, the discharging control signals DCHRG2 and DCHRG1 are low and indicate that discharging is not to occur on the interconnects 105 and 106-n, respectively. The charging control signals CHRG2 and CHRG1 remain respectively high and low during this phase and indicate that charging is not to occur on these interconnects as well. Thus, all of the transistors 119, 120, 112, and 113 are turned off.

During an enable phase from 400 ns to 500 ns, the charging control signal CHRG1 is high and indicates that charging on the target interconnect 106-n is to occur. The charging control signal CHRG2 remains high while the discharging control signals DCHRG2 and DCHRG1 remain low. This turns on the transistor 112 and leaves the other transistors 119, 120, and 113 off. The test structure 101 is now enabled for measuring the target interconnect capacitance c_(n).

Then, during a measure phase between 500 ns and 800 ns, the charging control signal CHRG2 is low and indicates that charging on the test interconnect 105 is to occur. The discharging control signal DCHRG2 remains low. The transistor 119 is now turned on while the transistor 120 is still off. Therefore, the transistor 119 draws a charging current I_(CHRG2) from the external voltage source 128 to the test interconnect. This places a desired charge (c_(n)) (V_(DD)) on the test interconnect.

Since the interconnects 105 and 106-n are coupled together by the target interconnect capacitance c_(n), an equal but opposite charge −(c_(n)) (V_(DD)) is induced on the target interconnect 106-n during the measure phase. The charging control signal CHRG1 is high during this time period so that the transistor 112 is kept on. As a result, a measurable charging current I_(CHRG1) is drawn from the target interconnect through the current meter 138 and to the local ground voltage source 131. This places the opposite charge on the target interconnect. A measurement of this current is made with the current meter during this phase.

During a disabling phase between 800 ns and 900 ns, the charging control signals CHRG2 and CHRG1 are high while the discharging control signals DCHRG2 and DCHRG1 remain low. This turns off the transistors 119 and 120 so that the test structure 101 is disabled from placing anymore charge on the test interconnect 105. However, the transistors 112 and 113 are respectively on and off so that the measurable charging current I_(CHRG1) is still being drawn from the target interconnect 106-n and measured with the current meter 138. This is done to ensure that all of the opposite charge −(c_(n)) (V_(DD)) on the target interconnect 106-n has been measured.

Then, the charging control signal CHRG2 is high and the discharge and charging control signals DCHRG2, CHRG1, and DCHRG1 are low during another off phase between 900 ns and 1000 ns. Thus, all of the transistors 119, 120, 112, and 113 are now turned off. The measurement of the measurable charging current I_(CHRG1) is complete for this cycle.

The process just described is then repeated over one or more measurement cycles. Since a conventional current meter 138 is used, it provides a measurement of the average current I_(AVG) for the measurable charging current I_(CHRG1) according to: $\begin{matrix} {I_{AVG} = {\frac{1}{T}{\int{{I_{CHRG1}(t)}\quad {t}}}}} & (1) \end{matrix}$

where t represents time and T is the time period of one measurement cycle. While this is all occurring, the frequency meter 139 is used to make a measurement of the frequency f_(CHRG1)/M of the measure control signal in a conventional manner. From these measurements and the known values for the supply voltage V_(DD) and the factor M, a measurement of the target interconnect capacitance c_(n) can then be computed according to: $\begin{matrix} {c_{n}\quad = \quad \frac{I_{AVG}}{\left( V_{DD} \right)\quad \left( {f_{CHRG1}/M} \right)\quad (M)}} & (2) \end{matrix}$

This provides a highly accurate measurement with attofared resolution.

The method just described may be performed similarly for any of the other target interconnect capacitances c₁, . . . , c_(n+1), . . . , c_(N) in the interconnect configuration 104, regardless of their size, position, configuration, and/or geometry. Furthermore, the method may be performed serially for each target interconnect capacitance c_(n) by appropriately connecting the current meter 138 to the corresponding measure sub-circuit 109-n. Or, it may be performed simultaneously for all of the interconnect capacitances c₁ to c_(N) with corresponding current meters connected to the target interconnect charging circuits 109-n to 109-N. Thus, only one test structure 101 is required to measure all of the interconnect capacitances in this specific interconnect configuration. This minimizes the chip area required by the test structure on the IC chip 102.

Alternative Embodiments

As those skilled in the art will recognize, alternative embodiments to that shown in FIG. 1 do exist. For example, only NMOS or only PMOS transistors may be used in the charging circuit 117. Of course, this would require a corresponding inversion of one of the charge and discharge signals CHRG2 and DCHRG2. Similarly, only PMOS transistors may be used in each target interconnect charging circuit 109-n. This also would require inversion of the charge and discharging control signals CHRG1 and DCHRG1.

Furthermore, the control signal generator 114 is shown in FIG. 1 as being located on the IC chip 102. In another embodiment, it could also be located off-chip. In this case, the test structure 101 would include input pads to receive the respective control signals CHRG1, DCHRG1, CHRG2, and DCHRG2. The input pads would be formed on the IC chip using conventional semiconductor process techniques and would be connected to the respective control circuits 115, 116, 121, and 122 of the control signal generator with corresponding probes. The input pads would also be connected to the respective transistors 112, 113, 119, and 120 to provide them with the respective control signals.

In the section covering the operation of the test structure 101, it is mentioned that a measurement of the frequency f_(CHRG2) of the charging control signal CHRG2 is to be made in order to make a measurement of the target interconnect capacitance c_(n). In other embodiments, a measurement of the frequency of any one of the other control signals CHRG1, DCHRG1, and DCHRG2 can also be selected for this purpose. In this case, the corresponding control circuit 115, 116, or 122 will be connected to the frequency divider 127.

As mentioned in the section covering the configuration of the test structure 101, the interconnect configuration 104 of the test structure is used to model an interconnect configuration in an IC. As shown in FIG. 4, this IC 132 may also be formed on the same IC chip 102 with the test structure 101. In this way, the IC and the test structure can be fabricated simultaneously with exactly the same physical parameters and semiconductor process steps. Moreover, the measurements of the interconnect capacitances c₁ to c_(N) can be directly made by the manufacturer or a buyer of the IC chip. Alternatively, the test structure may be formed on a separate IC chip than the IC.

As will also be appreciated by those skilled in the art, the test structure 101 may be formed on the IC chip 102 with other test structures that include different interconnect configurations than that of the test structure 101. These interconnect configurations will also be formed according to the physical parameters and semiconductor process steps that are used in designing and fabricating the IC that will include them.

Conclusion

The invention disclosed herein comprises an improved on-chip test structure 101 and corresponding method for modeling target interconnect capacitances c₁ to c_(N) of a particular interconnect configuration 104. The interconnect configuration may have a simple or complicated configuration or geometry. The use of a target interconnect charging circuit 109-n for each target interconnect 106-n enables the corresponding target interconnect capacitance c_(n) to be measured with high accuracy and resolution. Moreover, only one test structure is required for making these measurements so that the chip area of the IC chip 102 on which it is formed is small.

The high accuracy and resolution of the measurements of the interconnect capacitances c₁ to c_(N) enables interconnect parameter measurements to be accurately extracted for circuit simulations. The extracted interconnect parameter measurements include measurements of interconnect heights and widths, oxide thicknesses between interconnects, and the interconnect capacitances. The circuit simulations in which the extracted interconnect parameter measurements are used are therefore very precise.

Finally, although the present invention has been described with reference to a few specific embodiments, the description is illustrative of the invention and is not to be construed as limiting the invention. Various modifications may occur to those skilled in the art without departing from the true spirit and scope of the invention as defined by the appended claims and their equivalents. 

What is claimed is:
 1. A method of modeling a target inconnect capacitance, the method comprsing the steps of: forming a test structure on an IC chip, the test structure being provided with an interconnect configuration having a test interconnect and a target interconnect; the test and target inconnects forming a target interconnect capacitance therebetween; a test interconnect charging circuit connected to the test intercnnect; and a target interconnect charging circuit connected to the target interconnect; placing a test charge on the test interconnect using the test interconnect charging circuit; drawing a target inconnect charging current from the target interconnect in response to the test charge and using the target interconnect charging circuit to place an opposite charge on the target interconnect that is induced by the target interconnect that is induced by the target interconnect capacitance; and making a measurement of the target interconnect charging current, whereby a measurement of the target interconnect capacitance may be computed from the measurement of the target interconnect charging current.
 2. The method of claim 1 wherein the test charge placing step comprises the step of drawing a test interconnect charging current to the test interconnect to place the test charge on the test interconnect.
 3. The method of claim 2 wherein: the test structure has rest and measure phases of operation; the steps of drawing the test and target interconnect charging currents occur during the measure phase; the method further comprises the steps of: drawing a test interconnect discharging current from the test interconnect during the reset phase to remove any pre-existing charge on the test interconnect; and drawing a target interconnect discharging current to the target interconnect during the reset phase to remove any pre-existing charge on the target interconnect.
 4. The method of claim 3 further comprising the step of: generating test interconnect charge and discharging control signals and target interconnect charge and discharging control signals; the step of drawing the test interconnect discharging current occurring during the reset phase when the test interconnect charge and discharging control signals respectively indicate that charging is not to occur and discharging is to occur; the step of drawing the target interconnect discharging current occurring during the reset phase when the target interconnect charge and discharging control signals respectively indicate that charging is not to occur and discharging is to occur; the step of drawing the test interconnect charging current occurring during the measure phase when the test interconnect charge and discharging control signals respectively indicate that charging is to occur and discharging is not to occur; the step of drawing the target interconnect charging current occurring during the measure phase when the target interconnect charge and discharging control signals respectively indicate that charging is to occur and discharging is not to occur.
 5. The method of claim 4 further comprising the steps of: dividing the frequency of a selected control signal of the test target interconnect charging and discharging control signals by a pre-selected factor to generate a frequency divided signal; and making a measurement of the frequency of the frenquency divided signal, whereby the measurement of the target capacitance may further be computed from the measurement of the frequency and the pre-selected factor. 